(Hong Kong)
Product Summary
The P6NK60ZFP is a Zener-Protected SuperMESH Power MOSFET. The P6NK60ZFP is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the P6NK60ZFP are (1)high current, high speed switching; (2)ideal for off-line power supplies, adaptors and pfc; (3)lighting.
Parametrics
P6NK60ZFP absolute maximum ratings: (1)VDS Drain-source Voltage (VGS =0): 600 V; (2)VDGR Drain-gate Voltage: 600 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current (continuous): 66A; (5)IDM Drain Current (pulsed): 24 A; (6)PTOT Total Dissipation: 32 W; (7)VISO Insulation Withstand Voltage (DC): 2500 V; (8)Tj Operating Junction Temperature: -55 to 150℃; (9)Tstg, Storage Temperature: -55 to 150℃.
Features
P6NK60ZFP features: (1)typical RDS(on) = 1Ω; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
