Product Summary
The BSP51 is an NPN darlington transistor. Application is industrial high gain amplification.
Parametrics
BSP51 absolute maximum ratings: (1)Collector-base voltage open emitter: 80 V; (2)Collector-emitter voltage VBE = 0: 60 V; (3)Emitter-base voltage open collector: 5 V; (4)Collector current (DC): 1 A; (5)Peak collector current: 2 A; (6)Base current (DC): 100 mA; (7)Total power dissipation Tamb ≤ 25 °C; note 1: 1.25 W; (8)Storage temperature: -65 +150 °C; (9)Junction temperature: 150 °C; (10)Operating ambient temperature: -65 +150 °C.
Features
BSP51 features: (1)High current (max. 1 A); (2)Low voltage (max. 80 V); (3)Integrated diode and resistor.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSP51 |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
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BSP51_Q |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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BSP51,115 |
NXP Semiconductors |
Transistors Darlington TRANS DARLINGTON TAPE-7 |
Data Sheet |
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