(Hong Kong)
Product Summary
The BFP640 E6327 is an NPN Silicon Germanium RF Transistor.
Parametrics
BFP640 E6327 absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 4V at TA>0℃; 3.7V at TA≤0℃; (2)Collector-emitter voltage, VCES: 13V; (3)Collector-base voltage, VCBO: 13V; (4)Emitter-base voltage, VEBO: 1.2V; (5)Collector current, IC: 150 mA; (6)Base current, IB: 10mA; (7)Total power dissipation, TS ≤ 75℃, Ptot: 500 mW; (8)Junction temperature, Tj: 150℃; (9)Ambient temperature, TA: -65 to 150℃; (10)Storage temperature, Tstg: -65 to 150℃.
Features
BFP640 E6327 features: (1)For high power amplifiers; (2)Ideal for low phase noise oscilators; (3)Maxim. available Gain Gma = 21 dB at 1.8 GHz; (4)Noise figure F = 0.9 dB at 1.8 GHz; (5)Gold metallization for high reliability; (6)70 GHz fT- Silicon Germanium technology.
Diagrams
